Current-induced motion of a transverse magnetic domain wall in the presence of spin Hall effect

被引:79
|
作者
Seo, Soo-Man [1 ]
Kim, Kyoung-Whan [2 ,3 ]
Ryu, Jisu [2 ,3 ]
Lee, Hyun-Woo [2 ,3 ]
Lee, Kyung-Jin [1 ,4 ,5 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea
[2] Pohang Univ Sci & Technol, PCTP, Kyungbuk 790784, South Korea
[3] Pohang Univ Sci & Technol, Dept Phys, Kyungbuk 790784, South Korea
[4] Natl Inst Stand & Technol, Ctr Nanoscale Sci & Technol, Gaithersburg, MD 20899 USA
[5] Univ Maryland, Maryland Nanoctr, College Pk, MD 20742 USA
关键词
D O I
10.1063/1.4733674
中图分类号
O59 [应用物理学];
学科分类号
摘要
We theoretically study current-induced dynamics of a transverse magnetic domain wall in bi-layer nanowires consisting of a ferromagnetic layer on top of a nonmagnetic layer with strong spin-orbit coupling. Domain wall dynamics is characterized by two threshold current densities, J(th)(WB) and J(th)(REV), where J(th)(WB) is a threshold for the chirality switching of the domain wall and J(th)(REV) is another threshold for the reversed domain wall motion caused by spin Hall effect. Domain walls with a certain chirality may move opposite to the electron-flow direction with high speed in the current range J(th)(REV) < J < J(th)(WB) for the system designed to satisfy the conditions J(th)(WB) > J(th)(REV) and alpha > beta, where alpha is the Gilbert damping constant and beta is the nonadiabaticity of spin torque. Micromagnetic simulations confirm the validity of analytical results. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733674]
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页数:5
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