Tunnel Field Effect Transistor with Ferroelectric Gate Insulator

被引：3

作者：

Lee, Kitae ^{[1
]}

Lee, Junil ^{[1
]}

Kim, Sihyun ^{[1
]}

Park, Euyhwan ^{[1
]}

Lee, Ryoongbin ^{[1
]}

Kim, Hyun-Min ^{[1
]}

Kim, Sangwan ^{[2
]}

Park, Byung-Gook ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Ajou Univ, Dept Elect & Comp Engn, Suwon 16449, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2019年 / 19卷 / 10期

关键词：

TFET; Ferroelectric; Capacitance Boosting; Low Power Devices; NEGATIVE CAPACITANCE;

D O I：

10.1166/jnn.2019.16994

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (I-on) is obtained. It is attributed to the polarization characteristic of the ferroelectric materials which brings the capacitance boosting effect. Through the TCAD simulation, the characteristics of the ferroelectric material for the optimal performance conditions are also studied.

引用

页码：6095 / 6098

页数：4

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