Energy dissipation and switching delay in stress-induced switching of multiferroic nanomagnets in the presence of thermal fluctuations

被引:97
作者
Roy, Kuntal [1 ]
Bandyopadhyay, Supriyo [1 ]
Atulasimha, Jayasimha [2 ]
机构
[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
[2] Virginia Commonwealth Univ, Dept Mech & Nucl Engn, Richmond, VA 23284 USA
基金
美国国家科学基金会;
关键词
ELECTRIC-FIELD; LOGIC; MEMORY; FILMS;
D O I
10.1063/1.4737792
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy (<1 aJ for a switching time of similar to 0.5 ns) at 0K temperature. Here, we show by solving the stochastic Landau-Lifshitz-Gilbert equation that switching can be carried out with similar to 100% probability in less than 1 ns while dissipating less than 1.5 aJ at room temperature. This makes nanomagnetic logic and memory systems, predicated on stress-induced magnetic reversal, one of the most energy-efficient computing hardware extant. We also study the dependence of energy dissipation, switching delay, and the critical stress needed to switch, on the rate at which stress on the nanomagnet is ramped up or down. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737792]
引用
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页数:8
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