Investigation of Trap States in Mid-Wavelength Infrared Type II Superlattices Using Time-Resolved Photoluminescence

被引：25

作者：

Connelly, Blair C. ^{[1
]}

Metcalfe, Grace D. ^{[1
]}

Shen, Hongen ^{[1
]}

Wraback, Michael ^{[1
]}

Canedy, Chadwick L. ^{[2
]}

Vurgaftman, Igor ^{[2
]}

Melinger, Joseph S. ^{[2
]}

Affouda, Chaffra A. ^{[2
]}

Jackson, Eric M. ^{[2
]}

Nolde, Jill A. ^{[2
]}

Meyer, Jerry R. ^{[2
]}

Aifer, Edward H. ^{[2
]}

机构：

[1] US Army Res Lab, RDRL SEE M, Adelphi, MD 20783 USA

[2] US Naval Res Lab, Washington, DC 20375 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 11期

关键词：

Type II superlattice; minority-carrier lifetime; time-resolved photoluminescence; Shockley-Read-Hall; trap saturation; infrared;

D O I：

10.1007/s11664-013-2759-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Time-resolved photoluminescence (TRPL) spectroscopy is used to study the minority-carrier lifetime in mid-wavelength infrared, n-type, InAs/Ga1-x In (x) Sb type II superlattices (T2SLs) and investigate the recombination mechanisms and trap states that currently limit their performance. Observation of multiple exponential decays in the intensity-dependent TRPL data indicates trap saturation due to the filling then emptying of trap states and different Shockley-Read-Hall (SRH) lifetimes for minority and majority carriers, with tau (maj) (tau (n0)) a parts per thousand << tau (min) (tau (p0)). Simulation of the photoluminescence transient captures the qualitative behavior of the TRPL data as a function of temperature and excess carrier density. A trap state native to Ga1-x In (x) Sb is identified from the low-injection temperature-dependent TRPL data and found to be located below the intrinsic Fermi level of the superlattice, approximately 60 +/- A 15 meV above the valence-band maximum. Low-temperature TRPL data show a variation of the minority-carrier SRH lifetime, tau (p0), over a set of InAs/Ga1-x In (x) Sb T2SLs, where tau (p0) increases as x is varied from 0.04 to 0.065 and the relative layer thickness of Ga1-x In (x) Sb is increased by 31%.

引用

页码：3203 / 3210

页数：8

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