Quantitative analysis of strain in silicon crystals using x-ray Pendellosung oscillations

被引：4

作者：

Saka, T ^{[1
]}

机构：

[1] Daido Inst Technol, Dept Elect & Elect Engn, Nagoya, Aichi 4578530, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 02期

关键词：

X-ray; diffraction; Pendellosung oscillation; silicon; crystal; strain; quantitative analysis;

D O I：

10.1143/JJAP.43.841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A practical quantitative analysis technique for long-range strain in silicon crystals observable by rotating specimen along the scattering vector in X-ray diffraction is proposed. Strain gradients cause the shrinkage of the period of Pendellosung oscillations. From the period of the oscillations, strains are estimated without any reference specimens.

引用

页码：841 / 842

页数：2

共 11 条

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