Temperature dependence of interband recombination energy in symmetric (In,Ga)N spherical quantum dot-quantum well

Within the framework of effective-mass approximation and finite parabolic potential barrier, single particle and ground-state interband recombination energies in Core vertical bar well vertical bar shell based On GaN vertical bar(In,Ga)N vertical bar GaN spherical QDQW are investigated as a function of the inner and the outer radii. The temperature dependency of effective-mass, band-gap energy and potential barrier is taken into account. Particle eigenvalue and band-gap energy competing effects are speculated to explain our numerical results which show that the interband recombination energy increases when the temperature increases. The results we obtained are in quite good agreement with the findings. (C) 2013 Elsevier B.V. All rights reserved