Group-III vacancy induced InxGa1-xAs quantum dot interdiffusion

被引：35
作者：
Djie, HS
Gunawan, O
Wang, DN
Ooi, BS [1 ]
Hwang, JCM
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
来源：
PHYSICAL REVIEW B | 2006年 / 73卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.73.155324
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The impact of group-III vacancy diffusion, generated during dielectric cap induced intermixing, on the energy state transition and the inhomogeneity reduction in the InGaAs/GaAs quantum-dot structure is investigated. We use a three-dimensional quantum-dot diffusion model and photoluminescence data to determine the thermal and the interdiffusion properties of the quantum dot. The band gap energy variation related to the dot uniformity is found to be dominantly affected by the height fluctuation. A group-III vacancies migration energy H-m for InGaAs quantum dots of 1.7 eV was deduced. This result is similar to the value obtained from the bulk and GaAs/AlGaAs quantum-well materials confirming the role of SiO2 capping enhanced group-III vacancy induced interdiffusion in the InGaAs quantum dots.
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页数：6
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