Degradation of charge sharing after neutron irradiation in strip silicon detectors with different geometries

被引：2

作者：

Casse, G. ^{[1
]}

Dervan, P. ^{[1
]}

Forshaw, D. ^{[1
]}

Greenall, A. ^{[1
]}

Huse, T. ^{[1
]}

Tsurin, I. ^{[1
]}

Wormald, M. ^{[1
]}

机构：

[1] Univ Liverpool, Dept Phys, O Lodge Lab, Liverpool L69 7ZE, Merseyside, England

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 730卷

关键词：

Silicon micro strip detectors; Radiation tolerance; Charge multiplication; RD50; HL-LHC;

D O I：

10.1016/j.nima.2013.05.158

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The aim of the CERNIRD50 collaboration is the improvement of the radiation tolerance of semiconductor detectors for future experiments at high-luminosity colliders. In the RD50 framework, evidence of enhanced signal charge in severely irradiated silicon detectors (diodes, segmented planar and 3D devices) was found. The underlying mechanism was labelled charge multiplication. This has been one of the most exciting results from the research activity of RD50 because it could allow for a greatly extended radiation tolerance, if the mechanism is to be found controllable and tuneable. The charge multiplication mechanism is governed by impact ionisation from electrons drifting in high electric field. The electric field profile is influenced by the geometry of the implanted electrodes. In order to investigate the influence of the diode implantation geometry on charge multiplication, the RD50 collaboration has commissioned the production of miniature microstrip silicon sensors with various choices of strip pitch and strip width over pitch (w/p) ratios. Moreover, some of the sensors were produced interleaving readout strips with dummy intermediate ones in order to modify the electric field profile. These geometrical solutions can influence both charge multiplication and charge sharing between adjacent strips. The initial results of this study are here presented. (C) 2013 CERN. Published by Elsevier B.V. All rights reserved,

引用

页码：54 / 57

页数：4

共 12 条

[1] Studies of charge collection efficiencies of planar silicon detectors after doses up to 1015 neq cm-2 and the effect of varying diode configurations and substrate types [J].

Affolder, Anthony ;

Allport, Phil ;

Casse, Gianluigi .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 604 (1-2) :250-253

[2]

[Anonymous], 2009, 14 RD50 WORKSH RAD H

[3] First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon [J].

Casse, G ;

Allport, PP ;

Garcia, SMI ;

Lozano, M ;

Turner, PR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 518 (1-2) :340-342

[4] Enhanced efficiency of segmented silicon detectors of different thicknesses after proton irradiations up to 1 x 1016 neq cm2 [J].

Casse, Gianluigi ;

Affolder, A. ;

Allport, P. P. ;

Brown, H. ;

Wormald, M. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2010, 624 (02) :401-404

[5] Evaluation of Floating Zone and Epitaxial Planar Silicon Detectors With Different Substrate Thickness After Irradiation up to 2 x 1016 neq cm-2 [J].

Casse, Gianluigi ;

Affolder, Antony ;

Allport, Philip P. ;

Wormald, Michael .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (06) :3752-3758

[6] CAPACITATIVE CHARGE DIVISION READOUT WITH A SILICON STRIP DETECTOR [J].

ENGLAND, JBA ;

HYAMS, BD ;

HUBBELING, L ;

VERMEULEN, JC ;

WEILHAMMER, P .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1981, 185 (1-3) :43-47

[7] Radiation hard silicon detectors -: developments by the RD48 (ROSE) collaboration [J].

Lindström, G ;

Ahmed, M ;

Albergo, S ;

Allport, P ;

Anderson, D ;

Andricek, L ;

Angarano, MM ;

Augelli, V ;

Bacchetta, N ;

Bartalini, P ;

Bates, R ;

Biggeri, U ;

Bilei, GM ;

Bisello, D ;

Boemi, D ;

Borchi, E ;

Botila, T ;

Brodbeck, TJ ;

Bruzzi, M ;

Budzynski, T ;

Burger, P ;

Campabadal, F ;

Casse, G ;

Catacchini, E ;

Chilingarov, A ;

Ciampolini, P ;

Cindro, V ;

Costa, MJ ;

Creanza, D ;

Clauws, P ;

Da Via, C ;

Davies, G ;

De Boer, W ;

Dell'Orso, R ;

De Palma, M ;

Dezillie, B ;

Eremin, V ;

Evrard, O ;

Fallica, G ;

Fanourakis, G ;

Feick, H ;

Focardi, E ;

Fonseca, L ;

Fretwurst, E ;

Fuster, J ;

Gabathuler, K ;

Glaser, M ;

Grabiec, P ;

Grigoriev, E ;

Hall, G .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2001, 466 (02) :308-326

[8] Performance of thin pixel sensors irradiated up to a fluence of 1016 neq cm-2 and development of a new interconnection technology for the upgrade of the ATLAS pixel system [J].

Macchiolo, A. ;

Andricek, L. ;

Beimforde, M. ;

Moser, H. -G. ;

Nisius, R. ;

Richter, R. H. ;

Weigell, P. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 650 (01) :145-149

[9] Measurement of anomalously high charge collection efficiency in n+p strip detectors irradiated by up to 1016neq/cm2 [J].

Mandic, Igor ;

Cindro, Vladimir ;

Kramberger, Gregor ;

Mikuz, Marko .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 603 (03) :263-267

[10] Computational analysis of irradiation facilities at the JS']JSI TRIGA reactor [J].

Snoj, Luka ;

Zerovnik, Gasper ;

Trkov, Andrej .

APPLIED RADIATION AND ISOTOPES, 2012, 70 (03) :483-488

← 1 2 →