5 kV, 9.5 A SiC JBS Diodes with Non-uniform Guard Ring Edge Termination for High Power Switching Application

被引：8

作者：

Hu, Jun ^{[1
]}

Li, Larry X. ^{[2
]}

Alexandrov, Petre ^{[2
]}

Wang, Xiaohui ^{[2
]}

Zhao, Jian H. ^{[1
]}

机构：

[1] Rutgers State Univ, ECE Dept, SiCLAB, 94 Brett Rd, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

JBS diode; guard ring edge termination; half bridge inverter; HALF-BRIDGE INVERTER;

D O I：

10.4028/www.scientific.net/MSF.600-603.947

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45 mu m thick, 1.4x10(15)cm(-3) doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm(2) at 3.5V and a specific on resistance (R-SP_(ON)) of 25.2m Omega.cm(2), which is very close to the theoretical R-SP_(ON) of 23.3m Omega.cm(2). DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

引用

页码：947 / +

页数：2

共 5 条

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