2.6 W optically-pumped semiconductor disk laser operating at 1.57-μm using wafer fusion

被引：40

作者：

Rautiainen, Jussi ^{[1
]}

Lyytikaeinen, Jari ^{[1
]}

Sirbu, Alexei ^{[2
]}

Mereuta, Alexandru ^{[2
]}

Caliman, Andrei ^{[2
]}

Kapon, Eli ^{[2
]}

Okhotnikov, Oleg G. ^{[1
]}

机构：

[1] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 26期

关键词：

D O I：

10.1364/OE.16.021881

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a wafer fused high-power optically-pumped semiconductor disk laser incorporating InP-based active medium fused to a GaAs/AlGaAs distributed Bragg reflector. A record value of over 2.6 W of output power in a spectral range around 1.57 mu m was demonstrated, revealing the essential advantage of the wafer fusing technique over monolithically-grown all-InP-based structures. The presented approach allows for integration of lattice-mismatched compounds, quantum-well and quantum-dot based media. This would provide convenient means for extending the wavelength range of semiconductor disk lasers. (C) 2008 Optical Society of America

引用

页码：21881 / 21886

页数：6

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