Hybrid and Monolithic GaN Power Transistors for High Power S-Band Radar Applications

被引：0

作者：

Wood, Simon M. ^{[1
]}

Andre, Ulf ^{[1
]}

Millon, Bradley J. ^{[1
]}

Milligan, Jim ^{[1
]}

机构：

[1] Cree Inc, RF & Power Devices, Res Triangle Pk, NC USA

来源：

2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年

关键词：

GaN; HEMT; Power Amplifier; Radar; MMIC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

this paper presents the design, development and characterization of three products for S-Band Radar applications. These products include two 240 Watt hybrid power transistors and a fully integrated 75 Watt packaged MMIC.

引用

页码：421 / 424

页数：4

共 8 条

[1]

[Anonymous], 1997, EIAJESD59 JEDEC

[2]

Bahl I., 2009, FUNDAMENTALS RF MICR, P56

[3]

Boers M., 2008, M BOERS PHD STUDENT

[4]

Dunn I, 2012, MICROWAVE J, V55, P28

[5]

Fornetti F, 2009, 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), P226

[6] Thermal Analysis and its application to High Power GaN HEMT Amplifiers [J].

Prejs, A. ;

Wood, S. ;

Pengelly, R. ;

Pribble, W. .

2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, :917-920

[7]

Richards M. A., 2010, PRINCIPLES MODERN RA, P317

[8]

Schuh P, 2010, EUR MICROW CONF, P1540

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