Josephson effect in Nb/Al2O3/Al/MgB2 large-area thin-film heterostructures

被引：41
作者：
Carapella, G [1 ]
Martucciello, N
Costabile, G
Ferdeghini, C
Ferrando, V
Grassano, G
机构：
[1] Univ Salerno, INFM Res Unit, I-84081 Baronissi, Italy
[2] Univ Salerno, Dept Phys, I-84081 Baronissi, Italy
[3] Univ Genoa, Dept Phys, I-16146 Genoa, Italy
[4] Univ Genoa, INFM Res Unit, I-16146 Genoa, Italy
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 16期
关键词：
Ac Josephson effect - Conductance spectra - Josephson current - Josephson effect - Microwave-induced - Shapiro steps;
D O I：
10.1063/1.1472470
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the demonstration of dc and ac Josephson effects in Nb/Al2O3/Al/MgB2 thin-film heterostructure. The heterostructure exhibits moderately hysteretic current-voltage characteristic with a dc Josephson current branch and regular microwave-induced Shapiro steps. From conductance spectrum, a gap of about 2 meV at 7.7 K is estimated for the proximized surface of MgB2 electrode. (C) 2002 American Institute of Physics.
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页码：2949 / 2951
页数：3
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