A superior 15 kV SiC MOSFET with current spreading layer for high-frequency applications

被引：11

作者：

Kitai, Hidenori ^{[1
]}

Yamaguchi, Tsutomu ^{[1
]}

Hozumi, Yasuo ^{[1
]}

Shiomi, Hiromu ^{[1
]}

Fukuda, Kenji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SB期

关键词：

POWER; RELIABILITY; PERFORMANCE; DESIGN;

D O I：

10.7567/1347-4065/ab01d1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we developed a superior 15 kV silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) with a current spreading layer (CSL) implanted with nitrogen ions. This MOSFET was developed for high-frequency applications. The CSL and junction field-effect transistor (JFET) regions were optimized using device simulations to reduce reverse transfer capacitance without increasing on-resistance. A SiC MOSFET with a CSL and a die with a size of 5 mm x 5 mm was fabricated. We simultaneously obtained a specific on-resistance of 191 m Omega cm(2), a blocking voltage of 15.0 kV, and a reverse transfer capacitance of 0.75 pF for a narrow JFET width of 1.2 mu m. In addition, threshold voltage shifts were kept within +/- 0.1 V for 1000 h at a gate voltage of -15 V and at a temperature of 200 degrees C. (C) 2019 The Japan Society of Applied Physics

引用

页数：10

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