Design criteria for transparent single-wall carbon nanotube thin-film transistors

被引：146

作者：

Unalan, HE ^{[1
]}

Fanchini, G ^{[1
]}

Kanwal, A ^{[1
]}

Du Pasquier, A ^{[1
]}

Chhowalla, M ^{[1
]}

机构：

[1] Rutgers State Univ, Piscataway, NJ 08854 USA

来源：

NANO LETTERS | 2006年 / 6卷 / 04期

关键词：

D O I：

10.1021/NL052406l

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A study based on two-dimensional percolation theory yielding quantitative parameters for optimum connectivity of transparent single-wall carbon nanotube (SWNT) thin films is reported. Optimum SWNT concentration in the filtrated solution was found to be 0.1 mg/L with a volume of 30 mL. Such parameters lead to SWNT fractions in the films of approximately Phi = 1.8 x 10(-3), much below the metallic percolation threshold, which is found to be similar to Phi(c) = 5.5 x 10(-3). Therefore, the performance of transparent carbon nanotube thin-film transistors is limited by the metallic SWNTs, even below their percolation threshold. We show how this effect is related to hopping or tunneling between neighboring metallic tubes.

引用

页码：677 / 682

页数：6

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