A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications

被引：168
作者：
Tsai, KC [1 ]
Gray, PR [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1999年 / 34卷 / 07期
基金：
美国国家科学基金会;
关键词：
Balun; CMOS radio frequency (RF); microwave power amplifiers; wireless communications;
D O I：
10.1109/4.772411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a 1-W, class-E power amplifier that is implemented in a 0.35-mu m CMOS technology and suitable for operations up to 2 GHz, The concept of mode locking is used in the design, in which the amplifier acts as an oscillator whose output is forced to run at the input frequency. A compact off-chip microstrip balun is also proposed for output differential-to-single-ended conversion. At 2-V supply and at 1.98 GHz, the power amplifier achieves 48% power-added efficiency (41% combined with the balun).
引用
收藏
页码：962 / 970
页数：9
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