Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes

被引：33

作者：

Lin, Ray-Ming ^{[1
,2
]}

Yu, Sheng-Fu ^{[3
,4
]}

Chang, Shoou-Jinn ^{[3
,4
]}

Chiang, Tsung-Hsun ^{[3
,4
]}

Chang, Sheng-Po ^{[3
,4
]}

Chen, Chang-Ho ^{[5
]}

机构：

[1] Chang Gung Univ, Grad Inst Elect Engn, Tao Yuan 333, Taiwan

[2] Chang Gung Univ, Green Technol Res Ctr, Tao Yuan 333, Taiwan

[3] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[4] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[5] MOME Business Dev Grp LED Div, Tao Yuan 333, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期

关键词：

VAPOR-PHASE EPITAXY;

D O I：

10.1063/1.4747802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we observed a dramatic decrease in the efficiency droop of InGaN/GaN light-emitting diodes after positioning a p-InGaN insertion layer before the p-AlGaN electron-blocking layer. The saturated external quantum efficiency of this device extended to 316 mA, with an efficiency droop of only 7% upon increasing the operating current to 1 A; in contrast, the corresponding conventional light-emitting diode suffered a severe efficiency droop of 42%. We suspect that the asymmetric carrier distribution was effectively mitigated as a result of an improvement in the hole injection rate and a suppression of electron overflow. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747802]

引用

页数：4

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