Electronic structure of proton conducting SrCeO3-SrZrO3 thin films

被引：1
作者：
Higuchi, I
Tsukamoto, T
Sata, N
Yamaguchi, S
Shin, S
Hattori, I
机构：
[1] Tokyo Univ Sci, Dept Appl Phys, Shinjuk Ku, Tokyo 1628601, Japan
[2] Tohoku Univ, Grad Sch Engn, Sendai, Miyagi 9808579, Japan
[3] Univ Tokyo, Dept Mat & Sci, Tokyo 1138656, Japan
[4] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[5] RIKEN, Hyogo 6795143, Japan
来源：
SOLID STATE IONICS | 2005年 / 176卷 / 39-40期
关键词：
Sr[Ce1-xZrx](0.95)Yb0.05O3-delta thin film; X-ray absorption spectroscopy (XAS); electronic structure; hole; acceptor level; hydrogen-induced level;
D O I：
10.1016/j.ssi.2005.09.031
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic structure of the protonic conductor Sr[Ce1-xZrx](0.95)Yb0.05O3-delta thin film has been studied by soft-X-ray spectroscopy. The valence band is composed mainly of the 0 2p state. The conduction band is composed of Ce 4f and Zr 4d states. The holes and acceptor level are observed at the top of the valence band and just above the Fermi level (E-F), respectively. In H-2-annealed Sr[Ce1-xZrx](0.95)Yb-0.O-05(3-delta) thin films, their intensities decrease and the hydrogen-induced level is created at just below EF. The energy separation between the bottom of the hydrogen-induced level and the top of the valence band agrees with the activation energy estimated from the electrical conductivity. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：2963 / 2966
页数：4
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