Ultra-Short Pulse HiPIMS: A Strategy to Suppress Arcing during Reactive Deposition of SiO2Thin Films with Enhanced Mechanical and Optical Properties

被引:21
作者
Tiron, Vasile [1 ]
Velicu, Ioana-Laura [2 ]
Matei, Teodora [2 ]
Cristea, Daniel [3 ]
Cunha, Luis [4 ]
Stoian, George [5 ]
机构
[1] Alexandru Ioan Cuza Univ, Fac Phys, Res Dept, Iasi 700506, Romania
[2] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania
[3] Transilvania Univ, Fac Mat Sci & Engn, Dept Mat Sci, Brasov 500068, Romania
[4] Univ Minho, Ctr Fis, Campus Gualtar, P-4710057 Braga, Portugal
[5] Natl Inst Res & Dev Tech Phys, Iasi 700050, Romania
关键词
reactive HiPIMS; silicon oxide; arcing; mechanical properties; POWER; SIO2; HYSTERESIS; COATINGS; MODEL; RATIO;
D O I
10.3390/coatings10070633
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this contribution, based on the detailed understanding of the processes' characteristics during reactive high-power impulse magnetron sputtering (HiPIMS), we demonstrated the deposition of silicon oxide (SiO2) thin films with improved optical and mechanical performances. A strategy for stabilizing the arc-free HiPIMS of Si target in the presence of oxygen was investigated. Arcing was suppressed by suitable pulse configurations, ensuring good process stability without using any feedback control system. It was found that arcing can be significantly alleviated when ultra-short HiPIMS pulses are applied on the target. The optical and mechanical properties of SiO(2)coatings deposited at various pulsing configurations were analyzed. The coatings prepared by ultra-short pulse HiPIMS exhibited better optical and mechanical performance compared to the coatings prepared by long pulse HiPIMS. The optimized SiO(2)coatings on quartz substrates exhibited an average transmittance of 98.5% in the 190-1100-nm wavelength range, hardness of 9.27 GPa, hardness/Young's modulus ratio of 0.138, and critical adhesion load of 14.8 N. The optical and mechanical properties are correlated with the film morphology, which is inherently related to energetic conditions and process stability during film growth.
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页数:11
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