CMOS: compatible wafer bonding for MEMS and wafer-level 3D integration

被引:29
作者
Dragoi, Viorel [1 ]
Pabo, Eric [2 ]
Burggraf, Juergen [1 ]
Mittendorfer, Gerald [1 ]
机构
[1] EV Grp, A-4782 St Florian Inn, Austria
[2] EV Grp Inc, Tempe, AZ 85284 USA
来源
MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 2012年 / 18卷 / 7-8期
关键词
Bonding Process; Bonding Layer; Transient Liquid Phase; Chemical Mechanical Planarization; Wafer Bonding;
D O I
10.1007/s00542-012-1439-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Wafer bonding became during past decade an important technology for MEMS manufacturing and wafer-level 3D integration applications. The increased complexity of the MEMS devices brings new challenges to the processing techniques. In MEMS manufacturing wafer bonding can be used for integration of the electronic components (e.g. CMOS circuitries) with the mechanical (e.g. resonators) or optical components (e.g. waveguides, mirrors) in a single, wafer-level process step. However, wafer bonding with CMOS wafers brings additional challenges due to very strict requirements in terms of process temperature and contamination. These challenges were identified and wafer bonding process solutions will be presented illustrated with examples.
引用
收藏
页码:1065 / 1075
页数:11
相关论文
共 16 条
[1]  
Cakmak E, 2009, MRS P, V1222
[2]  
Crnogorac F., 2009, IEEE P 3D IC, P1, DOI DOI 10.1109/3DIC.2009.5306531
[3]   Metal Thermocompression Wafer Bonding for 3D Integration and MEMS Applications [J].
Dragoi, V. ;
Mittendorfer, G. ;
Burggraf, J. ;
Wimplinger, M. .
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04) :27-35
[4]   Wafer Bonding Process Selection [J].
Dragoi, V. ;
Pabo, E. .
SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE, 2010, 33 (04) :509-517
[5]  
Dragoi V, 2005, MRS P, V872, pJ711
[6]  
Dragoi V, 2010, ROM J INF SCI TECH, V13, P65
[7]  
Garrou P., 2008, HDB 3D INTEGRATION T, V1, P26
[8]  
Humpston G., 2004, PRINCIPLES SOLDERING, P231
[9]   Effect of Post-Annealing Conditions on Cu-Cu Wafer Bonding Characteristics [J].
Jang, Eun-Jung ;
Park, Young-Bae ;
Pfeiffer, Sarah ;
Kim, Bioh ;
Matthias, Thorsten ;
Hyun, Seungmin ;
Lee, Hak-Joo .
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 54 (03) :1278-1282
[10]  
Kern W., 1993, HDB SEMICONDUCTOR WA, P102