Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated silicon

被引:0
|
作者
Corey, RL
Kernan, MJ
Leopold, DJ
Fedders, PA
Norberg, RE
Turner, WA
Paul, W
机构
[1] WASHINGTON UNIV, DEPT PHYS, ST LOUIS, MO 63130 USA
[2] HARVARD UNIV, CAMBRIDGE, MA 02138 USA
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Deuteron magnetic resonance measurements on high quality a-Si:H,D films reveal three principal features: a sharp 66 kHz quadrupolar Pake doublet corresponding to silicon-bonded D passivating dangling bonds, a broad central line which has been shown to arise primarily from relatively isolated D-2 and HD molecules in nanovoids, and a small narrow central line arising from mobile molecular D-2 and HD in greater than 3 Angstrom microvoids. The results of measurements on high quality plasma-deposited partially deuterated amorphous silicon cyclically exposed to a 2 h 150 degrees C dark anneal and a 36 h photoillumination at 0.5 W/cm(2) with a 400-700 nm xenon are lamp are described. The spectra show that, following an initial spin-lattice relaxation-related transient, the intensities of all three components of the deuterium may vary by less than 1% upon illumination or dark anneal. The broad central line, primarily from isolated molecules, shows a small diamagnetic shift upon illumination, The shift becomes strongly paramagnetic at short magnetization recovery times following radio frequency saturation. The Si-D doublet and the small narrow central line do not shift appreciably. This absence strongly suggests that Staebler-Wronski magnetic changes are remote from the environments of most of the silicon bonded hydrogen.
引用
收藏
页码:65 / 68
页数:4
相关论文
共 50 条
  • [41] Evidence for existence of hydrogen-related dangling bonds in hydrogenated amorphous silicon
    Yokomichi, H
    Morigaki, K
    PHILOSOPHICAL MAGAZINE LETTERS, 1996, 73 (05) : 283 - 287
  • [42] CHARGED DANGLING BONDS IN UNDOPED AMORPHOUS-SILICON
    SCHUMM, G
    LOTTER, E
    BAUER, GH
    APPLIED PHYSICS LETTERS, 1992, 60 (26) : 3262 - 3264
  • [43] AC AND DC CONDUCTIVITY IN AMORPHOUS SILICON-HYDROGEN FILMS
    RADSCHEIT, H
    BREITSCHWERDT, KG
    SOLID STATE COMMUNICATIONS, 1983, 47 (03) : 157 - 161
  • [44] PHOTOLUMINESCENCE IN SPUTTERED AMORPHOUS SILICON-HYDROGEN ALLOYS.
    Paesler, M.A.
    Paul, William
    Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, 1980, 41 (04): : 393 - 417
  • [45] COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS
    KNIGHTS, JC
    HAYES, TM
    MIKKELSEN, JC
    PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 712 - 715
  • [46] IMPROVEMENT OF THE STABILITY OF HYDROGENATED AMORPHOUS-SILICON BY HYDROGEN PLASMA TREATMENT
    NEVIN, WA
    YAMIAGISHI, H
    TAWADA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 4829 - 4832
  • [47] STM ON DOPED AND UNDOPED HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON FILMS
    ZIMMERMANNEDLING, W
    WIESENDANGER, R
    FINGER, F
    PRASAD, K
    SHAH, A
    ULTRAMICROSCOPY, 1992, 42 : 1398 - 1402
  • [48] ROLE OF HYDROGEN IN THE FORMATION AND STABILITY OF AN INTERFACE BETWEEN CRYSTALLINE SILICON AND HYDROGENATED AMORPHOUS-SILICON
    ROIZIN, YO
    TSYBESKOV, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (03): : 256 - 258
  • [49] Defect equilibration and intrinsic stress in undoped hydrogenated amorphous silicon
    Kitsuno, Yu
    Cho, Gyuseong
    Drewery, John
    Hong, Wan-Shick
    Perez-Mendez, Victor
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (3 A): : 1261 - 1267
  • [50] PHOTOCURRENT RESPONSE-TIMES IN UNDOPED AMORPHOUS HYDROGENATED SILICON
    PARKER, MA
    SCHIFF, EA
    APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1087 - 1089