Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated silicon

被引:0
|
作者
Corey, RL
Kernan, MJ
Leopold, DJ
Fedders, PA
Norberg, RE
Turner, WA
Paul, W
机构
[1] WASHINGTON UNIV, DEPT PHYS, ST LOUIS, MO 63130 USA
[2] HARVARD UNIV, CAMBRIDGE, MA 02138 USA
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Deuteron magnetic resonance measurements on high quality a-Si:H,D films reveal three principal features: a sharp 66 kHz quadrupolar Pake doublet corresponding to silicon-bonded D passivating dangling bonds, a broad central line which has been shown to arise primarily from relatively isolated D-2 and HD molecules in nanovoids, and a small narrow central line arising from mobile molecular D-2 and HD in greater than 3 Angstrom microvoids. The results of measurements on high quality plasma-deposited partially deuterated amorphous silicon cyclically exposed to a 2 h 150 degrees C dark anneal and a 36 h photoillumination at 0.5 W/cm(2) with a 400-700 nm xenon are lamp are described. The spectra show that, following an initial spin-lattice relaxation-related transient, the intensities of all three components of the deuterium may vary by less than 1% upon illumination or dark anneal. The broad central line, primarily from isolated molecules, shows a small diamagnetic shift upon illumination, The shift becomes strongly paramagnetic at short magnetization recovery times following radio frequency saturation. The Si-D doublet and the small narrow central line do not shift appreciably. This absence strongly suggests that Staebler-Wronski magnetic changes are remote from the environments of most of the silicon bonded hydrogen.
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页码:65 / 68
页数:4
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