Low-voltage low-power CMOS-RF transceiver design

被引:50
作者
Steyaert, MSJ [1 ]
De Muer, B [1 ]
Leroux, P [1 ]
Borremans, M [1 ]
Mertens, K [1 ]
机构
[1] Katholieke Univ Leuven, Dept Elektrotech Elect Syst Automatizat & Technol, Microelect & Sensors Labs, B-3001 Louvain, Belgium
关键词
CMOS; low power; low voltage; receiver; RF; transceiver; wireless;
D O I
10.1109/22.981281
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Research over the last ten years has resulted in attempts toward single-chip CMOS RF circuits for Bluetooth, global positioning system, digital enhanced cordless telecommunications and cellular applications. An overview of the use of CMOS for low-cost integration of a high-end cellular RF transceiver front-end is presented. Some fundamental pitfalls and limitations of RF CMOS are discussed. To circumvent these obstacles, the choice of transceiver architecture, circuit topology design, and systematic optimization of the different transceiver blocks is necessary. Moreover, optimization of the transceiver as one single block by minimizing the number of power-hungry interface circuits is emphasized. As examples, a fully integrated cellular transceiver front-end, a low-power extremely low noise-figure low-noise amplifier, and a very efficient power amplifier are demonstrated.
引用
收藏
页码:281 / 287
页数:7
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