Effect of Proton and Silicon Ion Irradiation on Defect Formation in GaAs

被引：12

作者：

Warner, Jeffrey H. ^{[1
,2
]}

Inguimbert, Christophe ^{[3
]}

Twigg, Mark E. ^{[1
]}

Messenger, Scott R. ^{[1
]}

Walters, Robert J. ^{[1
]}

Romero, Manuel J. ^{[4
]}

Summers, Geoffrey R. ^{[5
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] Univ Maryland, Dept Phys, Baltimore, MD 21201 USA

[3] ONERA DESP, F-31005 Toulouse, France

[4] Natl Renewable Energy Lab, Golden, CO 80401 USA

[5] Univ Maryland, Baltimore, MD 21253 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2008年 / 55卷 / 06期

关键词：

Defect formation; disordered regions; displacement damage; EBIC; GaAs; heavy ion; irradiation; NIEL; recoil spectrum; recombination centers; TEM;

D O I：

10.1109/TNS.2008.2006266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and structural changes in GaAs are monitored using electron beam induced current (EBIC) and transmission electron microscopy (TEM) measurements after irradiation by protons and silicon ions. It has been determined that higher energy protons (E >= 10 MeV) and silicon ions disordered regions that are electrically and structurally different than those produced by lower energy protons. The data suggest that these disordered regions are responsible for causing the deviations between experimental data and NIEL. From analyses of the recoil spectra, high energy recoils appear to be responsible for the formation of these disordered regions.

引用

页码：3016 / 3024

页数：9

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