Enhanced Photoluminescence from InGaN/GaN Quantum Wells on A GaN/Si(111) Template with Extended Three-Dimensional GaN Growth on Low-Temperature AlN Interlayer

被引：2

作者：

Jiang, Quanzhong ^{[1
]}

Lewins, Christopher J. ^{[1
]}

Allsopp, Duncan W. E. ^{[1
]}

Bowen, Chris R. ^{[1
]}

Wang, Wang N. ^{[1
]}

Satka, Alexander ^{[2
,3
]}

Priesol, Juraj ^{[2
,3
]}

Uherek, Frantisek ^{[2
,3
]}

机构：

[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AL, Avon, England

[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia

[3] Ctr Int Laser, Bratislava 84104, Slovakia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 06期

基金：

英国工程与自然科学研究理事会;

关键词：

DISLOCATIONS; REDUCTION; EPITAXY; DIODES; FILMS; LAYER;

D O I：

10.7567/JJAP.52.061002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a low-cost route for the reduction of dislocations during growth of GaN on Si(111) using metalorganic vapour phase epitaxy (MOVPE) through three-dimensional (3D) island growth on a low temperature AlN layer which introduces a compressive stress into the over-lying GaN layer to compensate for the thermal mismatch stress between the nitride layer and Si(111) substrate. Such a 3D growth process leads to the reduction of grain twist as the result of the reduction in the number of dislocations having a component parallel to the basal plane. The dislocation reduction process leads to a more uniform luminescence from InGaN/GaN quantum wells, as revealed by spectrally-resolved cathodoluminescence imaging of the cross-section of samples. (c) The Japan Society of Applied Physics

引用

页数：5

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