28 GHz MMIC resonant tunnelling diode oscillator of around 1mW output power

被引：26

作者：

Wang, J. ^{[1
]}

Wang, L. ^{[1
]}

Li, C. ^{[1
]}

Romeira, B. ^{[2
]}

Wasige, E. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, High Frequency Elect Grp, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Algarve, Dept Phys, CEOT, P-8005139 Faro, Portugal

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

Resonant tunneling - Tunnel diode oscillators - Phase noise - Resonant tunneling diodes;

D O I：

10.1049/el.2013.1583

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Presented is a monolithic microwave integrated circuit (MMIC) resonant tunnelling diode (RTD) oscillator that employs two In0.53Ga0.47As/AlAs RTDs (5 x 5 mu m(2)) in parallel. The oscillator works at 28.7 GHz with -0.7 dBm output power. The phase noise was -95 dBc/Hz at 100 kHz and -114 dBc/Hz at 1 MHz offset. This reported work demonstrates the potential of RTD oscillators in achieving high output power at high frequencies by utilising suitable power maximising and combining techniques.

引用

页码：816 / 817

页数：2

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