Room-temperature electrically pumped InGaN-based microdisk laser grown on Si

被引:41
作者
Feng, Meixin [1 ,2 ]
He, Junlei [1 ,3 ]
Sun, Qian [1 ,2 ,3 ]
Gao, Hongwei [1 ,2 ]
Li, Zengcheng [1 ]
Zhou, Yu [1 ,2 ]
Liu, Jianping [1 ,3 ]
Zhang, Shuming [1 ,3 ]
Li, Deyao [1 ]
Zhang, Liqun [1 ]
Sun, Xiaojuan [4 ]
Li, Dabing [4 ]
Wang, Huaibing [1 ]
Ikeda, Masao [1 ]
Wang, Rongxin [1 ]
Yang, Hui [1 ,3 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanchang 330200, Jiangxi, Peoples R China
[3] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
HIGH-POWER; GAN; DIODES;
D O I
10.1364/OE.26.005043
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:5043 / 5051
页数:9
相关论文
共 35 条
[31]   Direct-modulated waveguide-coupled microspiral disk lasers with spatially selective injection for on-chip optical interconnects [J].
Yang, Yue-De ;
Zhang, Yu ;
Huang, Yong-Zhen ;
Poon, Andrew W. .
OPTICS EXPRESS, 2014, 22 (01) :824-838
[32]   Optical Engineering of Modal Gain in a III-Nitride Laser with Nanoporous GaN [J].
Yuan, Ge ;
Xiong, Kanglin ;
Zhang, Cheng ;
Li, Yufeng ;
Han, Jung .
ACS PHOTONICS, 2016, 3 (09) :1604-1610
[33]   Mesoporous GaN for Photonic Engineering-Highly Reflective GaN Mirrors as an Example [J].
Zhang, Cheng ;
Park, Sung Hyun ;
Chen, Danti ;
Lin, Da-Wei ;
Xiong, Wen ;
Kuo, Hao-Chung ;
Lin, Chia-Feng ;
Cao, Hui ;
Han, Jung .
ACS PHOTONICS, 2015, 2 (07) :980-986
[34]   Improved crystalline quality of N-polar GaN epitaxial layers grown with reformed flow-rate-modulation technology [J].
Zhang, Heng ;
Zhang, Xiong ;
Wang, Shuchang ;
Wang, Xiaolei ;
Zhao, Jianguo ;
Wu, Zili ;
Dai, Qian ;
Yang, Hongquan ;
Cui, Yiping .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (01)
[35]   Whispering-gallery mode lasing from optically free-standing InGaN microdisks [J].
Zhang, Xuhui ;
Cheung, Yuk Fai ;
Zhang, Yiyun ;
Choi, H. W. .
OPTICS LETTERS, 2014, 39 (19) :5614-5617