共 35 条
Room-temperature electrically pumped InGaN-based microdisk laser grown on Si
被引:41
作者:
Feng, Meixin
[1
,2
]
He, Junlei
[1
,3
]
Sun, Qian
[1
,2
,3
]
Gao, Hongwei
[1
,2
]
Li, Zengcheng
[1
]
Zhou, Yu
[1
,2
]
Liu, Jianping
[1
,3
]
Zhang, Shuming
[1
,3
]
Li, Deyao
[1
]
Zhang, Liqun
[1
]
Sun, Xiaojuan
[4
]
Li, Dabing
[4
]
Wang, Huaibing
[1
]
Ikeda, Masao
[1
]
Wang, Rongxin
[1
]
Yang, Hui
[1
,3
]
机构:
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanchang 330200, Jiangxi, Peoples R China
[3] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China
[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China
基金:
中国博士后科学基金;
中国国家自然科学基金;
关键词:
HIGH-POWER;
GAN;
DIODES;
D O I:
10.1364/OE.26.005043
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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页码:5043 / 5051
页数:9
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