Room-temperature electrically pumped InGaN-based microdisk laser grown on Si

被引：41

作者：

Feng, Meixin ^{[1
,2
]}

He, Junlei ^{[1
,3
]}

Sun, Qian ^{[1
,2
,3
]}

Gao, Hongwei ^{[1
,2
]}

Li, Zengcheng ^{[1
]}

Zhou, Yu ^{[1
,2
]}

Liu, Jianping ^{[1
,3
]}

Zhang, Shuming ^{[1
,3
]}

Li, Deyao ^{[1
]}

Zhang, Liqun ^{[1
]}

Sun, Xiaojuan ^{[4
]}

Li, Dabing ^{[4
]}

Wang, Huaibing ^{[1
]}

Ikeda, Masao ^{[1
]}

Wang, Rongxin ^{[1
]}

Yang, Hui ^{[1
,3
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanchang 330200, Jiangxi, Peoples R China

[3] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China

[4] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Jilin, Peoples R China

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 04期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

HIGH-POWER; GAN; DIODES;

D O I：

10.1364/OE.26.005043

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon photonics has been longing for an efficient on-chip light source that is electrically driven at room temperature. Microdisk laser featured with low-loss whispering gallery modes can emit directional lasing beam through a closely coupled on-chip waveguide efficiently, and hence is particularly suitable for photonics integration. The realization of electrically pumped III-nitride microdisk laser grown on Si has been impeded by the conventional undercut structure, poor material quality, and a limited quality of GaN microdisk formed by dry etching. Here we report a successful fabrication of room-temperature electrically pumped InGaN-based microdisk lasers grown on Si. A dramatic narrowing of the electroluminescence spectral line-width and a clear discontinuity in the slope of light output power plotted as a function of the injection current provide an unambiguous evidence of lasing. This is the first observation of electrically pumped lasing in InGaN-based microdisk lasers grown on Si at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：5043 / 5051

页数：9

共 35 条

[1] Room temperature continuous-wave green lasing from an InGaN microdisk on silicon [J].