A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires

被引：1

作者：

Lin, Horng-Chih ^{[1
,2
,3
]}

Lin, Zer-Ming ^{[1
,2
]}

Huang, Tiao-Yuan ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[3] Natl Nano Device Labs, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期

关键词：

TRANSISTORS;

D O I：

10.7567/JJAP.52.04CC18

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we proposed a new methodology for probing the electrical properties of heavily doped polycrystalline silicon (poly-Si) nanowires (NWs), including active doping concentration, mobility, and interface fixed charge density. Implementation of this procedure is based on the modulation of the device operation of a gate-all-around (GAA) junctionless (J-less) transistor from the gated resistor mode to the ungated one. The extracted carrier concentration in the NW is found to be much lower than that of Hall measurements, while a negative fixed charge density is identified with the procedure. Dopant segregation at the oxide interface is postulated to be closely related to these observations. (C) 2013 The Japan Society of Applied Physics

引用

页数：6

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