A Low-Power CMOS Power Amplifier for Implanted Biomedical Ultra Wideband (UWB) Applications

被引:0
作者
Wang, L. Y. [1 ]
Li, B. [1 ]
Wu, Z. H. [1 ]
机构
[1] S China Univ Technol, Inst Microelect, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China
来源
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
关键词
power amplifier; ultra-wideband; implanted biomedical; low power;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a low power 3.0 to 6.2 GHz wideband power amplifier for implanted biomedical UWB communication system. The UWB PA employs a common-gate (CG) amplifier for wideband input matching, a common-source amplifier with RC shunt-shunt feedback and bondwire inductor source degeneration to obtain the high and flat gain, good linearity and small chip area, and a source-follower for good output matching. The PA was successfully designed with a 0.18mm CMOS technology. The post-layout simulation results indicated that the proposed PA had an average gain of 11dB, an input return loss(S-11) less than -14dB, an output return loss (S-22) less than -12dB, and an input 1-dB compression point (IP1dB) of -14dBm at 4GHz. Moreover, it only consumes a very low power of 13mW at 1.8V supply voltage, and a relatively small chip area of 0.86 X 0.81 mm(2)
引用
收藏
页码:608 / 610
页数:3
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