Atomic scale structure and chemistry of Bi2Te3/GaAs interfaces grown by metallorganic van der Waals epitaxy

被引：26

作者：

Dycus, J. Houston ^{[1
]}

White, Ryan M. ^{[1
]}

Pierce, Jonathan M. ^{[2
]}

Venkatasubramanian, Rama ^{[2
]}

LeBeau, James M. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] RTI Int, Ctr Solid State Energet, Res Triangle Pk, NC 27709 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 08期

关键词：

THERMOELECTRIC PROPERTIES; SUPERLATTICE STRUCTURES; TOPOLOGICAL INSULATORS; VANDERWAALS EPITAXY; SB2TE3; GASE;

D O I：

10.1063/1.4793518

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here, we report the atomic scale structure and chemistry of epitaxial Bi2Te3 thin films grown via metallorganic chemical vapor deposition on (001) GaAs substrates. Using aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF STEM), we report an atomically abrupt interface spanned by a second phase. Further, we demonstrate that interpretation of HAADF STEM image intensities does not provide an unambiguous interface structure. Combining atomic resolution imaging and spectroscopy, we determine the identity of the interfacial species is found to be consistent with that of a bilayer of Ga-Te that terminates GaAs dangling bonds. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4793518]

引用

页数：4

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