To deposit TiO2 films through plasma CVD, the partial pressure ratio of O-2 to TiCl4 should be greater than the stoichiometric ratio (p(O2)/p(TiCl4) > 1). However, this may lead to the formation of powder instead of film on the substrate when using volume dielectric barrier discharge (volume-DBD) at atmospheric pressure. In this study, by adding N-2 into the working gas Ar, TiO2 photocatalytic films were successfully fabricated in the presence of excess O-2 (p(O2)/p(TiCl4) = 2.6) by using a wire-to-plate atmospheric-pressure volume-DBD. The tuning effect of N-2 on the deposition of TiO2 film was studied in detail. The results showed that by increasing the N-2 content, the deposition rate and particle size of the TiO2 film were reduced, and its photocatalytic activity was enhanced. The tuning mechanism of N-2 is further discussed.
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Laboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of TechnologyLaboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of Technology
底兰波
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李小松
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赵天亮
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常大磊
刘倩倩
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Laboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of TechnologyLaboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of Technology
刘倩倩
朱爱民
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Laboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of TechnologyLaboratory of Plasma Physical Chemistry, School of Physics and Optoelectronic Engineering, Dalian University of Technology
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Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, LuxembourgLuxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, Luxembourg
Baba, Kamal
Bulou, Simon
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Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, LuxembourgLuxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, Luxembourg
Bulou, Simon
Choquet, Patrick
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Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, LuxembourgLuxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, Luxembourg
Choquet, Patrick
Boscher, Nicolas D.
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Luxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, LuxembourgLuxembourg Inst Sci & Technol, Mat Res & Technol Dept, L-4362 Eschsur Sur Alzette, Luxembourg