Nanosecond laser pulse induced concentric surface structures on SiO2 layer

被引：27

作者：

Sun, Wei ^{[1
,2
]}

Qi, Hongji ^{[1
]}

Fang, Zhou ^{[1
,2
]}

Yu, Zhenkun ^{[1
,2
]}

Liu, Yi ^{[3
]}

Yi, Kui ^{[1
]}

Shao, Jianda ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 10049, Peoples R China

[3] Ecole Polytech, CNRS, ENSTA, Lab Opt Appl, F-91762 Palaiseau, France

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 03期

关键词：

INDUCED PERIODIC STRUCTURES; SILICON-DIOXIDE/SILICON; FEMTOSECOND; ABLATION; WAVES; SEMICONDUCTORS; DEFECTS; FILMS;

D O I：

10.1364/OE.22.002948

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the periodic concentric surface structures on SiO2 layer induced by a single shot nanosecond laser pulse at 1.06 mu m. The fringe period of the structures ranges from 7.0 mu m to 26.8 mu m, depending on the laser fluence and the distance from central defect precursor. The size and depth of the damage sites increase almost linearly with the laser fluence from 19.6 J/cm(2) to 61 J/cm(2). Plasma flash was clearly observed during the damage process. We attribute the formation mechanism of the structures to the interference between the reflected laser radiations at the air/shock-front and the shock-front/film interfaces. (C)2014 Optical Society of America

引用

页码：2948 / 2954

页数：7

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