Characterisation of Y2O3 thin films deposited by laser ablation on MgO:: why a biaxial epitaxy

被引：15

作者：

Gaboriaud, RJ ^{[1
]}

Pailloux, F ^{[1
]}

Paumier, F ^{[1
]}

机构：

[1] Univ Poitiers, Met Phys Lab, SP2M1, UMR 6630,CNRS, F-86962 Chasseneuil, Futuroscope, France

来源：

APPLIED SURFACE SCIENCE | 2002年 / 188卷 / 1-2期

关键词：

heteroepitaxy; stress; dislocations; thin films; oxides; Y2O3;

D O I：

10.1016/S0169-4332(01)00716-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Yttrium oxide, Y2O3, thin films are deposited in situ at 700degreesC by laser ablation on MgO substrate. Orientation relationships are studied by means of asymmetric X-ray diffraction and HRTEM investigations. A particular attention is paid to the growth of the (100) orientation of the oxide which seems to be strongly related to the oxygen partial pressure in the deposition C chamber. An explanation in terms of a particular dislocation configuration is proposed. This configuration is linked to the oxygen partial pressure through the atom mobility in the thin oxide film. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：29 / 35

页数：7

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