Positive MR and Large Temperature-Field Sensitivity in Manganite Based Heterostructures

被引：56
作者：
Khachar, Uma [1 ]
Solanki, P. S. [1 ]
Choudhary, R. J. [2 ]
Phase, D. M. [2 ]
Kuberkar, D. G. [1 ]
机构：
[1] Saurashtra Univ, Dept Phys, Rajkot 360005, Gujarat, India
[2] UGC DAE Consortium Sci Res, Indore 452017, Madhya Pradesh, India
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2013年 / 29卷 / 10期
关键词：
Interfaces; Thin films; Pulsed laser deposition; X-ray diffraction; Electric properties; HEAVY-ION IRRADIATION; THIN-FILMS; GIANT MAGNETORESISTANCE; ELECTRONIC TRANSPORT; MAGNETIC-FIELD; THICKNESS; JUNCTIONS; SENSORS;
D O I：
10.1016/j.jmst.2013.05.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Studies on the ZnO/La0.5Pr0.2Sr0.3MnO3 (LPSMO)/SrNb0.002Ti0.998O3 (SNTO) heterostructure having varying thickness of p-type LPSMO (100 nm - LP1) and (200 nm - LP2) manganite are carried out. ZnO/LPSMO (n-p) and LPSMO/SNTO (p-n) junctions of both the heterostructures exhibit good rectifying behavior in a wide range of temperature and applied field. Forward and reverse bias characteristics of both the junctions of heterostructures show opposite behavior. The observation of negative magnetoresistance (MR) at 5 K and positive MR at 300 K, in both the heterostructures, has been explained in the context of interface region effects and filling of energy bands of LPSMO manganite. Further, at high temperature, the heterostructures exhibit large temperature (46% K-1) and field (40% T-1) sensitivities. Dependence of transport, magnetotransport, I-V and sensing properties of the heterostructures, on the temperature, field and film thicknesses have been discussed in this communication.
引用
收藏
页码：989 / 994
页数：6
相关论文
共 23 条
[1]   Ferromagnetic manganites:: spin-polarized conduction versus competing interactions [J].
Dörr, K .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (07) :R125-R150
[2]   CMR manganites: physics, thin films and devices [J].
Haghiri-Gosnet, AM ;
Renard, JP .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2003, 36 (08) :R127-R150
[3]   The effect of phase separation on the temperature dependent magnetoresistance in perovskite oxide heterojunction [J].
Hu, Chun-lian ;
Jin, Kui-juan ;
Han, Peng ;
Lu, Hui-bin ;
Liao, Leng ;
Yang, Guo-zhen .
APPLIED PHYSICS LETTERS, 2008, 93 (16)
[4]   Positive colossal magnetoresistance effect in ZnO/La0.7Sr0.3MnO3 heterostructure [J].
Jin, K. X. ;
Zhao, S. G. ;
Chen, C. L. ;
Wang, J. Y. ;
Luo, B. C. .
APPLIED PHYSICS LETTERS, 2008, 92 (11)
[5]   Positive colossal magnetoresistance from interface effect in p-n junction of La0.9Sr0.1MnO3 and SrNb0.01Ti0.99O3 -: art. no. 184428 [J].
Jin, KJ ;
Lu, HB ;
Zhou, QL ;
Zhao, K ;
Cheng, BL ;
Chen, ZH ;
Zhou, YL ;
Yang, GZ .
PHYSICAL REVIEW B, 2005, 71 (18)
[6]   THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].
JIN, S ;
TIEFEL, TH ;
MCCORMACK, M ;
FASTNACHT, RA ;
RAMESH, R ;
CHEN, LH .
SCIENCE, 1994, 264 (5157) :413-415
[7]   Influence of carbon black content and film thickness on vapor detection properties of polyvinylpyrrolidone composite sensors [J].
Kim, Yong Shin .
CURRENT APPLIED PHYSICS, 2010, 10 (01) :10-15
[8]   High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions -: art. no. 032502 [J].
Lu, HB ;
Dai, SY ;
Chen, ZH ;
Zhou, YL ;
Cheng, BL ;
Jin, KJ ;
Liu, LF ;
Yang, GZ ;
Ma, XL .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[9]   Large magnetotunneling effect at low magnetic fields in micrometer-scale epitaxial La0.67Sr.033MnO3 tunnel junctions [J].
Lu, Y ;
Li, XW ;
Gong, GQ ;
Xiao, G ;
Gupta, A ;
Lecoeur, P ;
Sun, JZ ;
Wang, YY ;
Dravid, VP .
PHYSICAL REVIEW B, 1996, 54 (12) :R8357-R8360
[10]   Effects of swift heavy ion irradiation on La0.5Pr0.2Sr0.3MnO3 epitaxial thin films grown by pulsed laser deposition [J].
Markna, J. H. ;
Parmar, R. N. ;
Rana, D. S. ;
Kumar, Ravi ;
Misra, P. ;
Kukreja, L. M. ;
Kuberkar, D. G. ;
Malik, S. K. .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 256 (02) :693-697
123