Electronic structure and many-body effects in self-assembled quantum dots

被引:3
作者
Leburton, JP
Fonseca, LRC
Nagaraja, S
Shumway, J
Ceperley, D
Martin, RM
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
关键词
D O I
10.1088/0953-8984/11/31/305
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A detailed model for the electronic properties of self-assembled InAs/GaAs quantum dots (SADs) is presented, with emphasis on inter-level transitions and many-body effects. The model is based on the self-consistent solution of three-dimensional Poisson and Schrodinger equations within the local (spin-) density approximation. Nonparabolicity of the band structure and a continuum model for the strain between GaAs and InAs results in position- and energy-dependent effective mass. The electronic spectra of SADs of various shapes have been determined with intraband level transitions and mid-infrared optical matrix elements. Shell structures obeying Hund's rule for various occupation numbers in pyramidal SADs agree well with recent capacitance measurements. It is shown that many-body interactions between orbital pairs of electrons are determined in a first approximation by classical Coulomb interaction.
引用
收藏
页码:5953 / 5967
页数:15
相关论文
共 33 条
  • [1] CHUANG SL, 1995, PHYSICS OPTOELECTRON
  • [2] Electronic structure of InAs/GaAs self-assembled quantum dots
    Cusack, MA
    Briddon, PR
    Jaros, M
    [J]. PHYSICAL REVIEW B, 1996, 54 (04) : R2300 - R2303
  • [3] Red-emitting semiconductor quantum dot lasers
    Fafard, S
    Hinzer, K
    Raymond, S
    Dion, M
    McCaffrey, J
    Feng, Y
    Charbonneau, S
    [J]. SCIENCE, 1996, 274 (5291) : 1350 - 1353
  • [4] Self-consistent calculation of the electronic structure and electron-electron interaction in self-assembled InAs-GaAs quantum dot structures
    Fonseca, LRC
    Jimenez, JL
    Leburton, JP
    Martin, RM
    [J]. PHYSICAL REVIEW B, 1998, 57 (07): : 4017 - 4026
  • [5] Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems
    Fonseca, LRC
    Jimenez, JL
    Leburton, JP
    [J]. PHYSICAL REVIEW B, 1998, 58 (15) : 9955 - 9960
  • [6] Shell structure and electron-electron interaction in self-assembled InAs quantum dots
    Fricke, M
    Lorke, A
    Kotthaus, JP
    MedeirosRibeiro, G
    Petroff, PM
    [J]. EUROPHYSICS LETTERS, 1996, 36 (03): : 197 - 202
  • [7] GARCIA JM, 1994, APPL PHYS LETT, V71, P2252
  • [8] GRUNDMANN M, 1995, PHYS REV B, V52, P969
  • [9] NEW OPTICAL MEMORY STRUCTURE USING SELF-ASSEMBLED INAS QUANTUM DOTS
    IMAMURA, K
    SUGIYAMA, Y
    NAKATA, Y
    MUTO, S
    YOKOYAMA, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (11A): : L1445 - L1447
  • [10] Inui T., 1996, Group Theory and Its Applications in Physics