共 33 条
Thermally induced modification of the graphene oxide film on the tantalum surface
被引:29
作者:
Komolov, A. S.
[1
]
Zhukov, Y. M.
[1
]
Lazneva, E. F.
[1
]
Aleshin, A. N.
[2
]
Pshenichnyuk, S. A.
[3
]
Gerasimova, N. B.
[1
]
Panina, Yu. A.
[1
]
Zashikhin, G. D.
[1
]
Baramygin, A. V.
[1
]
机构:
[1] St Petersburg State Univ, Univ Skaya Nab 7-9, St Petersburg, Russia
[2] Russian Acad Sci, Ioffe Inst, Politekhnicheskaya St 26, St Petersburg, Russia
[3] Russian Acad Sci, Inst Mol & Crystal Phys, Ufa Res Ctr, Prospekt Oktyabrya 151, Ufa, Russia
基金:
俄罗斯基础研究基金会;
关键词:
Graphene oxide;
Tantalum oxide;
Surfaces and interfaces;
Thermal treatment;
X-ray photoelectron spectroscopy;
OPTICAL-PROPERTIES;
THIN-FILMS;
DEPOSITION;
REDUCTION;
COMPOSITE;
SPECTROSCOPY;
TEMPERATURES;
NANOHYBRIDS;
LAYERS;
XPS;
D O I:
10.1016/j.matdes.2016.10.023
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
The interface chemical reactions, the deoxygenation and the overall thermal stability of the ex situ deposited graphene oxide (GO) thick film on the polycrystalline tantalum surface were studied by means of x-ray photoelectron spectroscopy (XPS) at room temperature and after annealing up to 600 degrees C. The evolution of the Ta-4f, C-1s and O-1s XPS core level spectra from the Ta/GO structure under study upon the increase of the annealing temperature was investigated with the reference to the uncovered Ta substrate surface. In the Ta/ GO structure the Ta relative atomic concentration was about 1% at room temperature due to the low porosity of the GO layer while the thermal desorption of the overlayer at the elevated temperatures was accompanied by an increase of the Ta concentration up to 47% at 500 degrees C. The C atoms relative concentration started decreasing after the annealing at 250 degrees C. accompanying the thermal desorption of the GO overlayer. The formation of the TaC compound starting from the 250 degrees C. annealing temperatures was determined. The relative oxygen concentration in the GO thick film was decreased upon increasing the annealing temperature accompanying both the thermal desorption of the GO material and the thermal reduction of the GO film. (C) 2016 Elsevier Ltd. All rights reserved.
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页码:319 / 325
页数:7
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