Thin gold films are promising transparent conductors with many actual and potential uses in "green" technologies, transparent electronics, etc. These applications require different substrate materials, and hence it is important to understand the role of the substrate on Au thin film growth. Such effects have been studied in this work wherein Au films ranging from island structures, via large scale coalescence into meandering metal networks, to thin homogenous layers were deposited by DC magnetron sputtering onto glass substrates and In2O3:Sn (ITO), SnO2:In and TiO2 base layers backed by glass. Optical, electrical and structural properties were recorded for films deposited onto unheated substrates. We found distinct and characteristic differences in Au growth on the various backings. Thus ITO and SnO2:In base layers yielded gold films with island features remaining to larger thicknesses than for deposition directly onto glass, and the sheet resistance was lower for gold deposition onto SnO2:In and ITO only when the gold films were less than similar to 5 nm in thickness. Our results highlight the complexity of substrates' influence on thin film formation. (C) 2013 Elsevier B.V. All rights reserved.
机构:
Yangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R ChinaYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
Li, D.
Goullet, A.
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CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere, F-44322 Nantes, FranceYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
Goullet, A.
Carette, M.
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CNRS, UMR 8520, Inst Elect Microelect & Nanotechnol IEMN, Ave Poincare, F-59652 Villeneuve Dascq, FranceYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
Carette, M.
Granier, A.
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CNRS, UMR 6502, Inst Mat Jean Rouxel IMN, 2 Rue Houssiniere, F-44322 Nantes, FranceYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
Granier, A.
Zhang, Y.
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Yangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R ChinaYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
Zhang, Y.
Landesman, J. P.
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CNRS, UMR 6251, Inst Phys Rennes, 263 Av Gen Leclerc, F-35042 Rennes, FranceYangzhou Univ, Coll Mech Engn, Yangzhou 225127, Jiangsu, Peoples R China
机构:
Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, MexicoUniv Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
Bedoya-Calle, Alvaro
Garcia-Mendez, Manuel
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Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, MexicoUniv Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
Garcia-Mendez, Manuel
Torres-Castro, Alejandro
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Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, MexicoUniv Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
Torres-Castro, Alejandro
Shaji, Sadasivan
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Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, MexicoUniv Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
Shaji, Sadasivan
Ortiz-Mendez, Ubaldo
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Univ Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
UANL, Ctr Innovac Invest & Desarrollo Ingn & Tecnol, Apodaca 66600, NL, MexicoUniv Autonoma Nuevo Leon, San Nicolas De Los Garza, NL, Mexico
机构:
Interuniv Accelerator Ctr, Mat Sci Div, Aruna Asaf Ali Marg, New Delhi 110067, India
Univ Petr & Energy Studies UPES, Dept Phys & Ctr Interdisciplinary Res, Dehra Dun 248007, Uttaranchal, IndiaLaser Lab, Dept Phys, Hisar 125001, Haryana, India
机构:
Institute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, GliwiceInstitute of Engineering Materials and Biomaterials, Silesian University of Technology, Konarskiego 18A, Gliwice