Numerical modeling of intensity and phase noise in semiconductor lasers

被引:109
作者
Ahmed, M [1 ]
Yamada, M
Saito, M
机构
[1] Kanazawa Univ, Fac Engn, Dept Elect & Elect Engn, Kanazawa, Ishikawa 9208667, Japan
[2] Mitsubishi Elect, Kamakura Works, Kamakura, Kanagawa 2478520, Japan
基金
日本学术振兴会;
关键词
Fourier transform; noise; numerical modeling; semiconductor lasers; spontaneous emission; time-domain analysis;
D O I
10.1109/3.970907
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A self-consistent numerical approach is demonstrated to analyze intensity and phase noise in semiconductor lasers. The approach takes into account the intrinsic fluctuations of the photon number, carrier number, and phase. A new systematic technique is proposed to generate the Langevin noise sources that derive the laser rate equations keeping their crosscorrelations satisfied. The simulation is applied to AlGaAs lasers operating in a single mode. The time-varying profiles of the fluctuating photon and carrier numbers and the instantaneous shift of the oscillating frequency are presented. Statistical analysis of the intensity and phase fluctuations is given. The frequency spectra of intensity and phase noise are calculated with help of the fast Fourier transform. The importance of taking into account the carrier number noise source and its cross-correlation with the noise source on the phase is examined by comparing our results with those by conventional methods.
引用
收藏
页码:1600 / 1610
页数:11
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