High-Power, Low-Efficiency-Droop Semipolar (20(2)over-bar(1)over-bar) Single-Quantum-Well Blue Light-Emitting Diodes

被引：108
作者：
Pan, Chih-Chien [1 ]
Tanaka, Shinichi [1 ]
Wu, Feng [1 ]
Zhao, Yuji [2 ]
Speck, James S. [1 ]
Nakamura, Shuji [1 ]
DenBaars, Steven P. [1 ,2 ]
Feezell, Daniel [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期
基金：
美国国家科学基金会;
关键词：
SEMICONDUCTORS; POLARIZATION; EMISSION;
D O I：
10.1143/APEX.5.062103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate a small-area (0.1mm(2)) semipolar (20 (2) over bar(1) over bar) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm(2), respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (mu-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer. (C) 2012 The Japan Society of Applied Physics
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页数：3
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