High-Power, Low-Efficiency-Droop Semipolar (20(2)over-bar(1)over-bar) Single-Quantum-Well Blue Light-Emitting Diodes

被引：108

作者：

Pan, Chih-Chien ^{[1
]}

Tanaka, Shinichi ^{[1
]}

Wu, Feng ^{[1
]}

Zhao, Yuji ^{[2
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
]}

DenBaars, Steven P. ^{[1
,2
]}

Feezell, Daniel ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 06期

基金：

美国国家科学基金会;

关键词：

SEMICONDUCTORS; POLARIZATION; EMISSION;

D O I：

10.1143/APEX.5.062103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a small-area (0.1mm(2)) semipolar (20 (2) over bar(1) over bar) blue (447 nm) light-emitting diode (LED) with high light output power (LOP) and external quantum efficiency (EQE) by utilizing a single 12-nm-thick InGaN quantum well. The LED had pulsed LOPs of 140, 253, 361, and 460mW, and EQEs of 50.1, 45.3, 43.0, and 41.2%, at current densities of 100, 200, 300, and 400 A/cm(2), respectively. The device showed little blue shift and had a narrow full width at half maximum (FWHM). Micro-electroluminescence (mu-EL) and scanning transmission electron microscope (STEM) images indicate a high-quality InGaN quantum well (QW) layer. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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