Study of Electronic and Optical properties of Boron Arsenide

被引：0
作者：
Lalngaihawmi, Rebecca [1 ]
Vanlalruata, B. [1 ]
Hnamte, Lalhriatpuia [1 ]
Thapa, R. K. [1 ]
机构：
[1] Mizoram Univ, Dept Phys, Condensed Matter Theory Res Grp, Aizawl, Mizoram, India
来源：
2016 INTERNATIONAL CONFERENCE ON ELECTRICAL, ELECTRONICS, AND OPTIMIZATION TECHNIQUES (ICEEOT) | 2016年
关键词：
DFT; FP-LAPW; GGA; DOS; band structure; band gap; III-V; BN; BP; ENERGY; BAS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The optimized crystal structure, energy band structures, density of states (DOS) of BAs were investigated using full potential linearized augmented plane wave method (FP-LAPW). The exchange-correlation potential was treated using the generalized gradient approximation (GGA). The calculated results such as band gaps are in fair agreement with the previous experimental data which is 1.2 eV.
引用
收藏
页码：1162 / 1166
页数：5
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