Influence of sputtering pressure on the properties of NiO films prepared by dc reactive magnetron sputtering

被引：0

作者：

Reddy, A. Mallikarjuna ^{[1
,2
]}

Joo, Seung Ki ^{[2
]}

Reddy, A. Sivasankar ^{[3
]}

Reddy, P. Sreedhara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

[2] Seoul Natl Univ, Res Inst Adv Mat, Dept Mat Sci & Engn, Seoul 151744, South Korea

[3] Kongju Natl Univ, Div Adv Mat Engn, Cheonan, South Korea

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2012年 / 14卷 / 9-10期

关键词：

Magnetron sputtering; Sputtering pressure; X-ray diffraction; Surface morphology; Optical properties; Electrical properties; OXIDE THIN-FILMS; ELECTROCHROMIC PROPERTIES; DEPOSITION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of sputtering pressure on the properties of dc reactive magnetron sputtered nickel oxide thin films was discussed in the present paper. The structural, morphological, compositional, optical and electrical properties of the deposited films were influenced by sputtering pressure. From X-ray diffractometer studies, it was observed that films were preferentially grown along (220) reflection. The films exhibited wide direct optical band gap of 3.82 eV with transmittance of 60% at the sputtering pressure of 4 Pa. Hall effect measurements showed that all films exhibited p-type conductivity and the electrical resistivity decreases with increasing the sputtering pressure up to 4 Pa, thereafter increased with sputtering pressure.

引用

页码：763 / 768

页数：6

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