Ferroelectric and piezoelectric properties of lead-free BaTiO3 doped Bi0.5Na0.5TiO3 thin films from metal-organic solution deposition

被引：67

作者：

Acharya, Susant Kumar ^{[1
,2
]}

Lee, Sang-Kwon ^{[2
]}

Hyung, Jung-Hwan ^{[2
]}

Yang, Yun-Ho ^{[1
]}

Kim, Bok-Hee ^{[1
]}

Ahn, Byung-Guk ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Hydrogen & Fuel Cell Res Ctr, Div Adv Mat Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, SPRC, BRL, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2012年 / 540卷

基金：

新加坡国家研究基金会;

关键词：

Thin films; Piezoelectricity; Dielectric response; Ferroelectrics; SOL-GEL; ELECTRICAL-PROPERTIES; TEMPERATURE; CERAMICS; PIEZORESPONSE;

D O I：

10.1016/j.jallcom.2012.06.071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Lead-free 0.94Bi(0.5)Na(0.5)TiO(3)-0.06BaTiO(3) (BNT-BT) piezoelectric thin films were prepared by metalorganic solution deposition onto a Pt/Ti/SiO2/Si substrate. A dense and well crystallized thin film with a perovskite phase was obtained by annealing these films at 700 degrees C. Atomic force microscopy showed that these films were smooth and crack-free with an average grain size on the order of 200 nm. Thin films of 356 nm thickness exhibited a small signal dielectric constant and a loss tangent at 1 kHz of 613 and 0.044, respectively. Ferroelectric hysteresis measurements indicated a remanent polarization value of 21.5 mu C/cm(2) with a coercive field of 164.5 kV/cm. The leakage current density of the thin film was 4.08 x 10(-4) A/cm(2) at an applied electric field of 200 kV/cm. A typical butterfly-shaped piezoresponse loop was observed and the effective piezoelectric coefficient (d(33)) of the BNT-BT thin film was approximately 51.6 pm/V. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：204 / 209

页数：6

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