High magnetoresistance in Co-Fe-B-based double barrier magnetic tunnel junction

被引：6

作者：

Zeng, Z. M. ^{[1
]}

Wei, H. X. ^{[1
]}

Jiang, L. X. ^{[1
]}

Du, G. X. ^{[1
]}

Zhan, W. S. ^{[1
]}

Han, X. F. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2006年 / 303卷 / 02期

关键词：

Magnetic tunnelling junction (MTJ); Double barrier magnetic tunnel junction (DBMTJ); Tunneling magnetoresistance (TMR);

D O I：

10.1016/j.jmmm.2006.01.039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetic transport properties of the double barrier magnetic tunnel junctions (DBMTJs) with amorphous Co-Fe-B electrodes, deposited by magnetron sputtering and patterned using optical lithography combined with lift-off technique, were investigated. A high tunnel magnetoresistance (TMR) ratio of 90.3% and 59.4%, resistance-area product of about 6.2 and 5.5 k Omega mu m(2) at 4.2K and room temperature, respectively, and a high bias voltage at which the TMR signal decreased to half of its maximum value, V-1/2 = 1.14V at negative bias voltage were measured experimentally for the DBMTJs. These results show that the DBMTJs are promising candidates for spin electronic devices. (C) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：E219 / E222

页数：4

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