Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se2 Thin Film Solar Cells

被引：7
作者：
Guo, Yuting [1 ]
Zhu, Hongbing [1 ,2 ]
Niu, Xiaona [1 ]
Zhang, Wen [1 ]
Li, Zhiqiang [1 ]
Chen, Jingwei [1 ]
Mai, Yaohua [1 ,2 ]
机构：
[1] Hebei Univ, Coll Phys Sci & Technol, Inst Photovolta, Baoding 071002, Peoples R China
[2] Jinan Univ, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China
来源：
ADVANCED ENGINEERING MATERIALS | 2016年 / 18卷 / 08期
基金：
中国国家自然科学基金;
关键词：
ELECTRONIC-PROPERTIES; CU(IN; GA)SE-2; FILMS; LAYERS; EFFICIENCY; ISSUES;
D O I：
10.1002/adem.201600113
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (T-sub) by low-pressure chemical vapor deposition (LPCVD) technique. The influence of T-sub on the properties of LPCVD ZnO and the performance of copper indium gallium di-selenide (Cu(In, Ga)Se-2, CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 degrees C. In addition, a thermal treatment at 104 degrees C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i-ZnO/n-ITO/Al grid.
引用
收藏
页码：1418 / 1425
页数：8
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