Influence of Substrate Temperature on LPCVD ZnO Thin Film and Cu(In, Ga)Se2 Thin Film Solar Cells

被引：7

作者：

Guo, Yuting ^{[1
]}

Zhu, Hongbing ^{[1
,2
]}

Niu, Xiaona ^{[1
]}

Zhang, Wen ^{[1
]}

Li, Zhiqiang ^{[1
]}

Chen, Jingwei ^{[1
]}

Mai, Yaohua ^{[1
,2
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Inst Photovolta, Baoding 071002, Peoples R China

[2] Jinan Univ, Coll Informat Sci & Technol, Guangzhou 510632, Guangdong, Peoples R China

来源：

ADVANCED ENGINEERING MATERIALS | 2016年 / 18卷 / 08期

基金：

中国国家自然科学基金;

关键词：

ELECTRONIC-PROPERTIES; CU(IN; GA)SE-2; FILMS; LAYERS; EFFICIENCY; ISSUES;

D O I：

10.1002/adem.201600113

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zinc oxide (ZnO) thin films are deposited at different substrate temperatures (T-sub) by low-pressure chemical vapor deposition (LPCVD) technique. The influence of T-sub on the properties of LPCVD ZnO and the performance of copper indium gallium di-selenide (Cu(In, Ga)Se-2, CIGS) thin films are systematically investigated. The highest efficiency of 11.7% is achieved for CIGS thin film solar cells with LPCVD ZnO thin film window layers deposited at 119 degrees C. In addition, a thermal treatment at 104 degrees C before the ZnO deposition results in a pronounced efficiency enhancement, and achieved a high efficiency of 14.4% in CIGS solar cell with the structure of glass/Mo/CIGS absorber/CdS/i-ZnO/n-ITO/Al grid.

引用

页码：1418 / 1425

页数：8

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