Silicon Oxide Passivation of Single-Crystalline CVD Diamond Evaluated by the Time-of-Flight Technique

被引：4

作者：

Kovi, Kiran Kumar ^{[1
]}

Majdi, Saman ^{[1
]}

Gabrysch, Markus ^{[1
]}

Isberg, Jan ^{[1
]}

机构：

[1] Uppsala Univ, Div Elect, Dept Engn Sci, SE-75121 Uppsala, Sweden

来源：

ECS SOLID STATE LETTERS | 2014年 / 3卷 / 05期

基金：

瑞典研究理事会;

关键词：

DRIFT VELOCITY-MEASUREMENT; CHARGE-TRANSPORT; MOBILITY; DETECTORS; SYSTEM;

D O I：

10.1149/2.004405ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The excellent material properties of diamond make it highly desirable for many extreme electronic applications that are out of reach of conventional electronic materials. For commercial diamond devices to become a reality, it is necessary to have an effective surface passivation since the passivation determines the ability of the device to withstand high surface electric fields. In this paper we present data from lateral Time-of-Flight studies on SiO2-passivated intrinsic single-crystalline CVD diamond. The SiO2 films were deposited using three different techniques. The influence of the passivation on hole transport was studied, which resulted in the increase of hole mobilities. The results from the three different passivations are compared. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：P65 / P68

页数：4

共 29 条

[1] Electrical transport measurements and emission properties of freestanding single crystalline CVD diamond samples [J].

Deferme, W. ;

Bogdan, A. ;

Bogdan, G. ;

Haenen, K. ;

de Ceuninck, W. ;

Nesladek, M. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (09) :3017-3022

[2] Diamond power devices. Concepts and limits [J].

Denisenko, A ;

Kohn, E .

[3] Development of a charge-carrier drift velocity measurement system in diamonds by using a UV pulse laser [J].

Fujita, F ;

Homma, A ;

Oshiki, Y ;

Kaneko, JH ;

Tsuji, K ;

Meguro, K ;

Yamamoto, Y ;

Imai, T ;

Teraji, T ;

Sawamura, T ;

Furusaka, M .

[4] Formation of secondary electron cascades in single-crystalline plasma-deposited diamond upon exposure to femtosecond x-ray pulses [J].

Gabrysch, M. ;

Marklund, E. ;

Hajdu, J. ;

Twitchen, D. J. ;

Rudati, J. ;

Lindenberg, A. M. ;

Caleman, C. ;

Falcone, R. W. ;

Tschentscher, T. ;

Moffat, K. ;

Bucksbaum, P. H. ;

Als-Nielsen, J. ;

Nelson, A. J. ;

Siddons, D. P. ;

Emma, P. J. ;

Krejcik, P. ;

Schlarb, H. ;

Arthur, J. ;

Brennan, S. ;

Hastings, J. ;

Isberg, J. .

JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)

[5] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1951, 81 (05) :835-843

[6] Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator [J].

Hirama, K ;

Miyamoto, S ;

Matsudaira, H ;

Yamada, K ;

Kawarada, H ;

Chikyo, T ;

Koinuma, H ;

Hasegawa, K ;

Umezawa, H .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[7] High carrier mobility in single-crystal plasma-deposited diamond [J].

Isberg, J ;

Hammersberg, J ;

Johansson, E ;

Wikström, T ;

Twitchen, DJ ;

Whitehead, AJ ;

Coe, SE ;

Scarsbrook, GA .

SCIENCE, 2002, 297 (5587) :1670-1672

[8] Transient current electric field profiling of single crystal CVD diamond [J].

Isberg, J. ;

Gabrysch, M. ;

Tajani, A. ;

Twitchen, D. J. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (08) :1193-1195

[9] Temperature dependence of hole drift mobility in high-purity single-crystal CVD diamond [J].

Isberg, J ;

Lindblom, A ;

Tajani, A ;

Twitchen, D .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (11) :2194-2198

[10] Single crystal diamond for electronic applications [J].

Isberg, J ;

Hammersberg, J ;

Twitchen, DJ ;

Whitehead, A .

← 1 2 3 →