Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers

被引:34
作者
Guo, W. [1 ]
Katz, M. B. [1 ]
Nelson, C. T. [1 ]
Heeg, T. [2 ]
Schlom, D. G. [2 ]
Liu, B. [3 ]
Che, Y. [3 ]
Pan, X. Q. [1 ]
机构
[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[3] IMRA Amer Inc, Mat Res Grp, Ann Arbor, MI 48105 USA
基金
美国国家科学基金会;
关键词
buffer layers; excitons; Hall mobility; IV-VI semiconductors; photoluminescence; semiconductor epitaxial layers; transmission electron microscopy; X-ray diffraction; zinc compounds; SINGLE-CRYSTALS; THIN-FILMS; TEMPERATURES; COEFFICIENT; EXCITON; SILICON; GROWTH; OXIDES;
D O I
10.1063/1.3095506
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial (0001) ZnO films were grown on (111) Si substrates using epitaxial (111) Sc2O3 buffer layers. The quality of the ZnO epilayers is manifested by a Hall mobility of 77 cm(2)/V s at room temperature, x-ray diffraction rocking curve full widths at half maximum of 300-400 arc sec, and optical properties comparable to ZnO single crystals. Transmission electron microscopy studies reveal that a thin layer of SiOx was formed at the Sc2O3/Si interface not during the Sc2O3 growth, but during the growth of the ZnO films. The thermal-mismatch induced residual strain in the films causes an energy shift of the exciton resonances in the photoluminescence spectrum. The redshifts are smaller than those of GaN films, indicating that the optical properties of ZnO are less strain sensitive.
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页数:3
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