Photoluminescence Properties of Indium-doped ZnO/Cu-graphene Thin Films Synthesized by Hydrothermal Method

被引:1
|
作者
Fan, Yuanyuan [1 ]
Ai, Taotao [1 ]
Li, Wenhu [1 ]
Deng, Zhifeng [1 ]
Yuan, Xinqiang [1 ]
机构
[1] Shaanxi Univ Technol, Sch Mat Sci & Engn, Natl & Local Joint Engn Lab Slag Comprehens Utili, Hanzhong 723000, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
hydrothermal method; ZnO; nanostructure; photoluminescence properties; blue emission; ELECTRONIC-STRUCTURE; GA; AL; FABRICATION;
D O I
10.18494/SAM.2019.2302
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Indium-doped ZnO/Cu-graphene thin films were successfully synthesized by a hydrothermal method at 90 degrees C for 6 h. The crystalline structure, elementary compositions, morphologies, and photoluminescence properties were investigated. The results indicated that ZnO nanorods with diameters varying from 0.315 to 3.348 mu m were obtained on Cu-graphene flexible substrates. An ultraviolet (UV) peak at 398 nm and a blue band were observed on the room-temperature photoluminescent (PL) spectra. The UV emission peak mainly attributed to the exciton transition. The blue emission band was assigned to the Zn interstitial (Zni) and Zn vacancy (VZn) level transition. The strongest blue emission band was observed on the PL spectra corresponding to the indium (In) doping concentration of 0.3%. The influence of In doping on the blue band was also investigated.
引用
收藏
页码:1357 / 1364
页数:8
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