Enhanced tunneling across nanometer-scale metal-semiconductor interfaces

被引:115
作者
Smit, GDJ
Rogge, S
Klapwijk, TM
机构
[1] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
关键词
D O I
10.1063/1.1467980
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured electrical transport across epitaxial, nanometer-sized metal-semiconductor interfaces by contacting CoSi2 islands grown on Si(111) with the tip of a scanning tunneling microscope. The conductance per unit area was found to increase with decreasing diode area. Indeed, the zero-bias conductance was found to be similar to10(4) times larger than expected from downscaling a conventional diode. These observations are explained by a model, which predicts a narrower barrier for small diodes and, therefore, a greatly increased contribution of tunneling to the electrical transport. (C) 2002 American Institute of Physics.
引用
收藏
页码:2568 / 2570
页数:3
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[41]   Chemical tuning of metal-semiconductor interfaces [J].
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